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*080  $a621.315.592.3
*080  $a621.315.592:548.58
*24500$aCapping and decapping of MBE grown GaAs(001), Al₀.₅Ga₀.₅As(001), and AlAs(001) investigated with ASP, PES, LEED, and RHEED$cR. W. Bernstein ... [et al.]
*260  $aTrondheim$bSINTEF, Applied Physics$c1991
*300  $a7 bl.$bill.
*4901 $aSINTEF report$vSTF19 A91036
*533  $aElektronisk reproduksjon$b[Norge]$cNasjonalbiblioteket Digital$d2016-12-12
*534  $aFotokopi av: Applied surface science, 1991
*650 7$aGalliumarsenid (Halvledere)$2tekord$_186897700
*650 7$aHalvledere$xEpitaksi$2tekord$_187009500
*7001 $aBernstein, Ralph W.$0(NO-TrBIB)90259303$_23859100
*830 0$aSINTEF rapport (SINTEF. Målefysisk laboratorium : trykt utg.)$vSTF19 A91036$w998110210764702201$_14526900
*85641$3Fulltekst$uhttps://urn.nb.no/URN:NBN:no-nb_digibok_2016121248044$yNettbiblioteket$zDigital representasjon
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^