*00158012
*00520250613135018.0
*007ta
*008931223s1993    no            000 u eng
*00900855cam a2200217 c 4500
*019  $bl
*035  $a(EXLNZ-47BIBSYS_NETWORK)999328643504702201
*035  $a(NO-LaBS)13995081(bibid)
*035  $a(NO-TrBIB)93286435x
*035  $a93286435x-47bibsys_network
*040  $aNO-OsNB$bnob$ekatreg
*24500$aFabrication of strained layer InGaAs/GaAs lasers emitting at 980- and 1017 nm$cby Ronald Sivertsen (red)
*260  $aKjeller$bTeleverkets forskningsinstitutt$c1993
*300  $a[7] bl.$bill.
*4901 $aForedrag / Televerkets forskningsinstitutt$vTF F 42/93
*500  $a"1992 European Semiconductor Laser Workshop, Potsdam 3 October 1993" - Referansesida
*588  $aKatalogisert etter omslag
*7001 $aSivertsen, Ronald$0(NO-TrBIB)90297932$_13510700
*830 0$aTF-foredrag (trykt utg.)$x0803-9240$vTF F 42/93$w999114033534702201$_13108200
*901  $a80
*999  $aoai:nb.bibsys.no:999328643504702202$b2021-11-14T19:44:55Z$z999328643504702202
^