*001737964
*00520250613135020.0
*007ta
*008931223s1993    no            000 u eng
*00900814cam a2200217 c 4500
*019  $bl
*035  $a(EXLNZ-47BIBSYS_NETWORK)999328643094702201
*035  $a(NO-LaBS)14436586(bibid)
*035  $a(NO-TrBIB)932864309
*035  $a932864309-47bibsys_network
*040  $aNO-OsNB$bnob$ekatreg
*24500$aGrowth of InGaAs and InAlAs for laser diodes$cby Ronald Sivertsen (red)
*260  $aKjeller$bTeleverkets forskningsinstitutt$c1993
*300  $a[17] s.$bill.
*4901 $aForedrag / Televerkets forskningsinstitutt$vTF F 41/93
*500  $a"Foredrag 7th Euro MBE, Bardonecchia, Italia, March 9, 1993" - Referansesida
*588  $aKatalogisert etter omslag
*7001 $aSivertsen, Ronald$0(NO-TrBIB)90297932$_13510700
*830 0$aTF-foredrag (trykt utg.)$x0803-9240$vTF F 41/93$w999114033534702201$_13108200
*901  $a80
*999  $aoai:nb.bibsys.no:999328643094702202$b2021-11-14T20:45:49Z$z999328643094702202
^