*001850668
*00520250613133744.0
*007cr
*007ta
*008150223s1990    no            000 0 eng d
*00901248cam a2200277 c 4500
*019  $bl
*035  $a(EXLNZ-47BIBSYS_NETWORK)999100123774702201
*035  $a(NO-LaBS)14063576(bibid)
*035  $a(NO-TrBIB)093283202
*035  $a(NO-TrBIB)910012377
*035  $a910012377-47bibsys_network
*040  $aNO-TrBIB$bnob$ekatreg
*1001 $aTuran, Raṣit$0(NO-TrBIB)90133270$_56485600
*24510$aNonequilibrium diffusion of dopants in silicon :$bnumerical solutions of the diffusion equation, application to redistribution of ion implanted dopants in <111> recrystallized silicon$cby Rasit Turan
*260  $a[Oslo]$c1990
*300  $a22 bl.$bill.
*4901 $aReport series / Department of Physics, University of Oslo$v90-23
*533  $aElektronisk reproduksjon$b[Norge]$cNasjonalbiblioteket Digital$d2009-08-21
*650 7$aDopelementer$0(NO-TrBIB)REAL012002$2noubomn$_204104600
*650 7$aSilisium$0(NO-TrBIB)REAL012199$2noubomn$_203798700
*653  $asilisium$adoping$_111195000
*830 0$aReport series (Universitetet i Oslo. Fysisk institutt) (trykt utg.)$x0801-6771$v90-23$w998120370064702201$_13945900
*85641$3Fulltekst$uhttps://urn.nb.no/URN:NBN:no-nb_digibok_2009082104051$yNettbiblioteket$zDigital representasjon
*901  $a80
*999  $aoai:nb.bibsys.no:999100123774702202$b2021-11-14T20:54:09Z$z999100123774702202
^